学术报告:Introduction of KOPTI R&D status in LED

来源:武汉大学物理科学与技术学院    发布时间 : 2014/09/21      点击量:

报告题目:Introduction of KOPTI R&D status in LED

报告时间:9月22日(周一)下午3:30

报告地点:物理学院新楼5楼多功能厅

报告人:Jong Hyeob Baek

简介:Jong Hyeob Baek received his BS, MS, and PhD degree in Materials Science & Engineering from Korea University in 1989, 1991, and 1999, respectively. He was a senior member of research staff at ETRI(Electronics and Telecommunications Research Institute) working on the epitaxial growth of long-wavelength vertical-cavity surface-emitting lasers(VCSELs) from 1991 to 1999. Prior to come to KOPTI(Korea Photonics Technology Institute) in October of 2002, he worked as a Post Doctoral fellow at UC San Diego and a member of technical staff at Nova Crystal Inc located in San Jose, USA. After he joined KOPTI, he has worked on the advanced epi/chip technologies of high-efficiency, high-power UV LED, GaN/Si LED, InGaAlP LEDs, wafer level packaging, LED convergence system etc. Currently he is directing LED R&D division in KOPTI. His research is multidisciplinary and involves close collaborations with oversea academic and industrial groups. He has published more than 150 papers holding over 80 patents in the field of laser diodes(LDs) and light-emitting diodes(LEDs).


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