学术报告:Fractional Chern Insulators in Topological Flat Bands

来源:武汉大学物理科学与技术学院    发布时间 : 2024/03/18      点击量:

报告题目:Fractional Chern Insulators in Topological Flat Bands

人:刘钊 研究员 (浙江大学物理学院)

报告时间:2024322日(周五)上午10:00

报告地点:物理科学与技术学院D505


报告摘要:

Fractional Chern insulators (FCIs) generalize the fractional quantum Hall effect (FQHE) from continuum two-dimensional (2D) electron gases to lattice setups. They typically arise when a nearly flat 2D Bloch band with nonzero Chern number is partially occupied by strongly interacting particles. Band topology and interactions endow FCIs intrinsic topological orders. Since in principle FCIs can exist at zero magnetic field and be protected by a large energy gap, they provide a potentially experimentally more accessible avenue for observing and harnessing FQHE phenomena. Moreover, the interplay between FCIs and lattice-specific effects poses new theoretical challenges. In this talk, I will first introduce FCIs, their numerical diagnoses, and the recent realization of these states in moiré materials. Then I will propose twisted double bilayer graphene as a versatile platform for the realization of FCIs. Finally, I will present a summary and list some important open questions.



报告人简介:

刘钊,浙江大学物理学院研究员、博士生导师。2007年于南京大学获得学士学位;2012年于中国科学院物理研究所获得博士学位;2012-2018年先后在北京计算科学研究中心、美国普林斯顿大学、德国柏林自由大学从事博士后工作;20189月入职浙江大学。刘钊研究员长期从事与拓扑物态相关的研究,包括分数量子霍尔效应、分数陈绝缘体、拓扑物态的非平衡动力学等;在Physical Review LettersPhysical Review XPhysical Review B等学术期刊发表论文40余篇,并受邀撰写了分数陈绝缘体方面的综述和图书章节。






人:吴冯成 教授



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