教师信息

教师姓名:孟宪权
单 位 武汉大学物理科学与技术学院
职 称 教授
学 历 博士
E-mail mengxq@whu.edu.cn
研究方向 半导体纳米材料与光电器件研究

详细描述

孟宪权,博士,教授,博导。

 
联系方式 Tel: 68752481-3425,  Email: mengxq@whu.edu.cn
研究方向:(1)半导体一维纳米材料及光电探测器研究
         (2)半导体激光器及发光二极管研究
(3)半导体物理(凝聚态物理)
         (4)电子线路设计
 
招收微电子、凝聚态物理两个专业的博士研究生,招收微电子、电科、物理、材料等专业的硕士研究生,优先招收博士生和硕博连读生。
 
主持的国家级项目及横向应用研究项目:
(1) InGaN量子阱的离子注入及其在白光LED中的应用研究,
国家自然科学基金面上项目,项目批准号:11275144 。
(2)离子注入制备硅基III - V 族半导体量子点及其光电特性研究,
国家自然科学基金面上项目,项目批准号:10775106。
(3)非致冷正入射吸收量子点中、远红外探测器研究,
    国家自然科学基金面上项目,项目批准号:60676036
(4)CdS一维纳米材料制备、组装及其紫外探测器研究,
中央高校基本科研业务费专项资金,项目批准号:413000008。
(5)大学本科生与半导体物理及材料相关的前沿课题研究,
国家基础科学人才培养基金子项目,项目批准号:J1210061。
(6)嵌入式设备及智能管理系统的开发研究,横向应用研究项目。
 
武汉大学硕士研究生毕业,中国科学院半导体研究所博士研究生毕业。参加了国家重大计划研究项目863和973有关量子点材料和器件的研究以及量子点子带间跃迁红外激光器材料和器件研究。Applied Surface Science及半导体学报的论文审稿人。承担了本科生近代电子材料、电子线路实验课程,研究生电子材料与器件课程的教学工作。获武汉市科技进步一等奖一次。申请专利一项。共发表50多篇学术论文,以通讯作者或第一作者发表的国际期刊论文如下:
 
(1)Qinwei An, Xianquan Meng* and Pan Sun,High performance fully nanostructured photodetector with single-crystalline CdS nanotubes as active layer and very long Ag nanowires as transparent electrodes
ACS Applied Materials & interface, 7(2015)22941-22952,SCI一区, 影响因子6.723
 
(2)Su Mao, Yihe Liu, Pengan Li, Xianquan Meng Fabrication and comparative sudy of vertically-grown and horizontally-dispersed fully nanowire-based photodetectors .
Appl. Surf. Sci., 359,(2015) 496-499.                SCI二区,影响因子 2.711
 
(3)Qinwei An, Xianquan Meng*, Guangrui Liu, Lifang Hong, Annealing of the superlong CdSnanotubes for enhanced performance in fully nanostructure dphotodetector,
Materials Letters ,161,(2015),751–754,           SCI二区,影响因子 2.489
 
(4)Yihe Liu, Pan Sun, Xianquan Meng*, A GaN nanowire-based photodetector with Ag nanowires as transparent electrodes.
IEEE Photonic. Tech. Lett. (2016)28(1), 23-26.          SCI二区,影响因子 2.110
 
(5)Yihe Liu and Xianquan Meng*, The controllable growth of GaN nanostructures with various morphologies
J. Mater. Sci.: Mater. El., 2015, 27(2), 1-7.  SCI三区,影响因子 1.569
 
(6)Pan Sun, Yihe Liu, Xiang Wan, Xianquan Meng*, Rui Su and Sheng Yu, Synthesis of long Ag nanowires and its application in GaN nanowires photodetector as transparent electrodes .
J. Mater. Sci.: Mater. El., 26(9),(2015) 6787-6792.      SCI三区,影响因子 1.569
 
(7)Yihe Liu, Xianquan Meng*, Xiang Wan, Huihui Huang, Hao Long and Guojia Fang
Synthesis and field emission studies of tower-like GaN nanowires
Nanoscale Research Letters  9(2014607,           SCI二区,影响因子 2.779
 
(8)Qinwei An, Xianquan Meng*, Lei Zhang, Yuanjia Zhao
Controllable growth of single crystalline CdS nanotubes by thermal evaporation
Materials Letters136 (2014) 55–58                  SCI二区,影响因子 2.489
 
(9)Pan SunYanchen LiXianquan Meng*Sheng YuYihe LiuFengqi LiuZhanguo Wang The magnetic field effect on optical properties of Sm-doped GaNthin films
J Mater Sci: Mater Electron 25 (2014) 2974–2978       SCI三区,影响因子 1.569
 
(10)Sun, Pan; Xue, Fei; Yu, Sheng; Meng, Xianquan*; Liu, Yihe; Zhang, LeiHydrothermal Synthesis of Ce-Doped CdSe/ZnS Nanostructure for Highly Efficient Green and Red Emitting
 Nanoscience and Nanotechnology Letters, 62014927-931,  SCI四区,影响因子 1.431
 
(11)Y. H. Liu, X. Q. Meng*, S. Yu, F. Xue, X. Wan,The optical and structural study of a blue emitting structure with dual InGaN/GaN multiple quantum wells,
Optics and spectroscopy, 116(201491–95,                SCI四区,影响因子 0.723
 
(12)Yanchen Li, Sheng Yu, Xianquan Meng*, Yihe Liu, Yonghe Zhao,Feng qi Liu and ZhanguoWang ,The effect of magnetic ordering on light emitting intensity of Eu-doped GaN,
J. Phys. D: Appl. Phys. 46 (2013) 215101                     SCI二区,影响因子 2.721
 
(13)W. J. Liu, X. Q. Meng*, Yi Zheng, Wei Xia, Synthesis and photoluminescence properties of ZnO nanorods and nanotubes,
Applied Surface Science,257(2010),677-679,            SCI二区,影响因子 2.711
 
(14)Wei Liu, X. Q. Meng *, H. X. Qiao, and Rui-Hua Xie,Investigation of Electronic Energy Levels in InAs Quantum Dot with Shape of Lens by Using B-Spline Technique,
J. Comput. Theor. Nanos. Vol.6, (2009)354-358,             SCI四区,影响因子1.343
 
(15)Dong Wang, X. Q. Meng * et al. Effect of electric field and annealing on the morphology and crystallinity of hydrothermally grown ZnO nanostructures,  
Physica E-low-dimensional system & nanostructures, 40 (2008) 852, SCI三区,影响因子2.000
 
(16)X. Q. Meng, Z. Q. Chen, P. Jin, et al. Defects around Self-organized Quantum Dots Measured by Slow Positron Beam,   
Applied Physics Letters 91 (2007),  093510-093512              SCI二区,影响因子3.302
 
(17)X. Q. Meng, P. Jin, Z. M. Liang, F. Q. Liu, Z. G. Wang, and Z. Y. Zhang ,Structure and properties of InAs/AlAs quantum dots for broadband emission,
J. Appl. Phys. , 108(2010), 103515-103519,              SCI三区,影响因子2.183
 
(18)X. Q. Meng, B. Xu, P. Jin, X. L. Ye,etal. Dependence of Optical Properties on the Structure of Self-Organized InAs Quantum Dots Emitting Near 1.3mm,
Journal of Crystal Growth 243 (2002) 432-438,                 SCI三区,影响因子1.698
 
(19)X. Q. Meng, P. Jin, B. Xu, et al. A novel line-order of InAs quantum dots on GaAs
Journal of Crystal Growth 241 (2002) 69-73,                   SCI三区,影响因子1.698
 
(20)X. Q. Meng,  W. Zhen, J.P. Guo and X. J. Fan  The structural, optical and electrical properties of ZnO and ZnO-Al2O3 thin films produced by dc magnetron sputtering,
Applied Physics A-Materials Science & Processing 70, (2000) 421-424,SCI三区,影响因子1.704
 
(21)X. Q. Meng, Zhao Chun, Wang Qiong, et al. Preparation of GaN thin films by reactive Ionized cluster beam techniqueChin. Phys. Lett. 16(5) (1999) 367-369 SCI四区,影响因子0.947
 
(22)X. Q. Meng, Z. H. Zhang, H. X. Guo A. G. Li. And X. J. Fan  Arc discharge synthesizing of carbon nitride,   Solid state communications 107(2)  (1998) 75-78,SCI三区,影响因子1.897
 
(23)X. Q. Meng, X. J. Fan H. X. Guo , A new formula on the thickness of films deposited by planar and cylindrical sputtering, Thin Solid Films 335 (1998) 279-283,SCI三区,影响因子1.759
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