副教授

教师姓名:何 进
单 位
职 称 副教授
学 历
E-mail jin.he@whu.edu.cn
研究方向

详细描述

姓    名:何进
职 称:副教授,博士生导师
地    址:武汉大学 物理科学与技术学院 新楼(1楼)5-119室
邮    箱: jin.he@whu.edu.cn
 
何进,2010年7月毕业于新加坡南洋理工大学电气与电子工程学院,获博士学位。
武汉大学物理科学与技术学院微电子系副教授,博士生导师,IEEE Senior Member,中国通信学会高级会员,同时担任多种重要国际期刊和会议的审稿人。2003年起先后在武汉烽火通信科技股份有限公司微电子部、新加坡南洋理工大学、新加坡微电子研究院等单位从事用于无线通信和光通信的CMOS/BiCMOS模拟、射频、毫米波集成电路与系统的研发工作。历任工程师、Research Associate、Senior Research Engineer、Scientist,Project Leader等职务,参与和主持了多个芯片项目的研发,包括高速跨阻放大器、超宽带开关、超宽带脉冲无线电收发机、压控振荡器、高频锁相环、毫米波开关、毫米波功率放大器和混频器、毫米波收发机等,并有芯片量产。2013年加入武汉大学物理科学与技术学院。
承担本科生《模拟CMOS集成电路设计》、《射频集成电路与系统》、《CMOS环形振荡器集成电路设计综合实验》,硕士研究生《射频/微波集成电路与系统设计》等课程主讲。2013年遴选为博士生导师,已培养毕业硕士研究生5人,正在培养硕士研究生7人,正在培养博士研究生1人。指导学生获得全国本科生、研究生电子设计比赛二、三等奖多项。
主要从事射频/微波/毫米波集成电路与系统、高速光通信集成电路与系统等方面的科研工作。主持国防预研项目1项、国家自然科学基金1项、湖北省自然科学基金1项、中央高校基本科研2项。在IEEE Transactions on Microwave Theory and Technique、IEEE Transaction on Electron Devices、IEEE ACCESS、IEEE Microwave and Wireless Components Letters、IEEE Asia-Pacific Microwave Conference、International Conference on Solid-State and Integrated Circuit、微电子学、微电子学与计算机、半导体技术等国内外核心刊物上发表论文50余篇。美国发明专利1项,全英文专著1本。
  
一、研究方向:
1)     射频/微波/毫米波集成电路与系统
2)     高速光通信集成电路与系统
 
二、主持的科研项目:
1)     国家自然科学基金面上项目:面向芯片间光互连的硅基高速全集成光接收机芯片研究,2018.01-2021.12,63 万元,项目负责人
2)     国防预研项目:硅基高速xx术研究,2017.01-2018.12, 58万元,项目负责人
3)     中央高校基本科研项目(国防类):基于xx源技术研究,2016.01-2017.12,10 万元,项目负责人
4)     中央高校基本科研项目:用于高速光接收机的跨阻前置放大器芯片设计,2015.01-2016.12, 10 万元,项目负责人
5)     湖北省自然科学基金面上项目:毫米波高速无线发射系统片上集成关键技术研究,2014.01-2015.12,3万元,项目负责人
 
三、与集成电路设计的相关学术成果:
期刊论文
J. Luo, Jin He*, A. Apriyana, G. Feng, Q. Huang, and Y. P. Zhang, Tunable Surface-Plasmon-Polariton Filter Constructed By Corrugated Metallic Line and High Permittivity Material, IEEE ACCESS, vol. 6, no.1, pp.10358-10364, 2018.
J. Luo, Jin He*, H. Wang, S. Chang, Q. Huang,and X. Yu, A 28 GHz LNA Using Defected Ground Structure for 5G Application, Microwave and Optical Technology Letters. vol. 60, no.5, pp.1067-1072, 2018.
J. Luo, Jin He*, P. Chen, H. Wang, S. Chang and Q. Huang, X. Mao, and Y. P. Zhang, Micro-Strip Line 90° Phase Shifter with Double Ground Slots for D-Band Applications, Journal of Circuits, Systems, and Computers, vol. 27, no.12, pp.1850192:1-10, 2018.
J. Luo, Jin He*, A Apriyana, G. Feng, and Q. Huang, A D-band SPST switch using parallel-stripline swap with defected ground structure, IEICE Electronics Express, vol.14, no.24, pp.1-10, 2017.
X. Chen, Q. Su, T. Chen, L. Cai, J. Luo, H. Wang, S. Chang, Q. Huang, and Jin He*, Modeling 3-Port Center-Tapped Spiral Inductors for K-Band VCO, Microwave Journal, vol. 60, no. 10, pp.86-98, Oct. 2017.
Jin He,Y. Z. Xiong,J. Li,A. M. Annamalai,Y. P. Zhang,A Fully-Integrated D-Band Frequency Synthesizer in 0.13-μm SiGe BiCMOS, Journal of Circuits, Systems, and Computers,vol. 25, no.1, pp. 1640010:1-13, 2016.
Jin He,Y. P. Zhang,W. Lim,Y. Xiong,A low-pass SPST switch in 65 nm CMOS, Microelectronics Journal,vol. 46, no.12, pp. 1464-1468, 2015.
T. Sun,N. Xue,C. Liu,C. Wang, Jin He*,Bioactive (Si, O, N)/(Ti,O, N)/Ti composite coating on NiTi shape memory alloy for enhanced wear and corrosion performance, Applied Surface Science,vol. 11, no. 30, pp. 599-609, 2015.
A. Apriyana, Jin He*,Y. P. Zhang,Electromagnetic Analysis and Circuit Modeling of Ultra-Wideband SPST Switch in 65-nm CMOS Technology, Forum for Electromagnetic Research Methods and Application Technologies,vol. 01, no. 01, pp. 1-9, 2014.
J. Li,Y. Xiong, Jin He*,W. Wu,A Q-band frequency synthesizer in 0.13 μm SiGe BiCMOS, Progress in Electromagnetics Research C,vol. 01, no. 47, pp. 19-28, 2014.
Jin He, J. Luo,H. Wang,S. Chang,Q. Huang,Y. P. Zhang,A CMOS fifth-derivative Gaussian pulse generator for UWB applications, Chinese Journal of Semiconductors,vol. 35, no.9, pp. 1-4, 2014.
S. M. Hu,Y. Hoe,H. Li,D. Zhao,J. Shi,Y. Han,T. K. Hwa,Y. Xiong, Jin He*,X. Zhang,J. Minkyu,M. Mohammad,A Thermal Isolation Technique Using Through-Silicon Vias for Three-Dimensional ICs, IEEE Transactions on Electron Devices,vol. 60, no. 3, pp. 1282-1287, 2013.
D. Hou,W. Hong,W. Goh,Y. Xiong,A. M. Annamalai, Jin He*,J. Chen,M. Mohammad,Distributed Modeling of Six-Port Transformer for Millimeter-Wave SiGe BiCMOS Circuits Design,IEEE Transactions on Microwave Theory and Techniques,vol. 60, no. 12, pp. 3728-3738, 2012.
Jin He, Y. Xiong,Y. P. Zhang,Analysis and Design of 60-GHz SPDT Switch in 130-nm CMOS, IEEE Transactions on Microwave Theory and Techniques,vol. 60, no. 10, pp. 3113-3119, 2012.
Jin He,Y. P. Zhang,W. Lim,Y. Xiong,A fully integrated differential impulse radio transmitter, Analog Integrated Circuits and Signal Processing,vol. 70, no. 1, pp. 47-56, 2012.
Jin He,Y. P. Zhang,Y. Xiong,A 60-GHz Single-Pole-Single-Throw Switch in 65-nm Bulk CMOS, International Journal of RF and Microwave Computer-Aided Engineering,vol. 21, no. 2, pp. 190-198, 2011.
Jin He,Y. P. Zhang,A CMOS differential fifth-derivative Gaussian pulse generator for UWB applications, Microwave and Optical Technology Letters,vol. 52, no. 8, pp. 1849-1852, 2010.
Jin He,Y. P. Zhang,K. Yeo,W. Lim,A Comparative Study of Two Techniques for Improving Power-Handling Capability of CMOS T/R Switches, International Journal of RF and Microwave Computer-Aided Engineering,vol. 20, no. 3, pp. 298-305, 2010.
会议论文
Jiang Luo, Jin He*, Guangyin Feng, Alit Apriyana, Qijun Huang, and Hao Yu, “A Broadband CMOS Amplifier in D band using Pole-tuning Technique with T-type Network,” IEEE International Wireless Symposium (IWS). (accepted for publication)
J. Luo, A. Apriyana, G. Feng, G. Su, Q. Chen, Jin He*, Q. Huang, and H. Yu, A Sub-Terahertz Multi-pixel Imaging System with Surface Wave Resonator for Isolation, IEEE Asia Pacific Microwave Conference, Nov. 2017, pp. 422-425.
P. Chen, Jin He*, J. Luo, H. Wang, S. Chang, Q. Huang, H. Yu, and X. Yu, Fully Integrated Pseudo Differential K-band Power Amplifier in 0.13um Standard CMOS, IEEE International Symposium on Integrated Circuits , Dec. 2016, pp. 1-4.
T. Chen, Jin He*, P. Chen, X. Chen, H. Wang, S. Chang, and Q. Huang, Accurate modeling of three-port center-tapped octagonal inductors for SPDT switch design in 0.13-μm BiCMOS, IEEE International Conference on Ubiquitous Wireless Broadband, Oct. 2016, pp. 1-4.
P. Cheng, Jin He*, J. Luo, H. Wang, S. Chang, Q. Huang, D. Hou, Y. Xiong, and Y. P. Zhang, “150-GHz SPDT switch with rat-race coupler topology in 0.13-μm SiGe BiCMOS,” IEEE Asia Pacific Microwave Conference, Dec. 2015, pp. 1-3.
J. Luo, Jin He*, H. Wang, S. Chang, Q. Huang, and Y. Xiong, A 150-GHz push-push VCO in 0.13-μm SiGe BiCMOS, IEEE International Symposium on Integrated Circuits, Dec. 2014, pp. 308-311.
Jin He,Y. Xiong,J. Li,D. Hou,S. Hu,D. Yan,A. M. Annamalai,Y. P. Zhang,A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGeBiCMOS for D-band applications, IEEE International Symposium on Integrated Circuits, Dec. 2014, pp. 156-159.
Jin He, J. Li, D. Hou, Y. Xiong, D. Yan, A. M. Annamalai, and J. Minkyu, A 20-GHz VCO for PLL synthesizer in 0.13-μm BiCMOS, IEEE International Symposium on Radio-Frequency Integration Technology, Nov. 2012, pp. 231-233.
 
英文专著
CMOS Switches Design for UWB and 60-GHz Applications, ISBN 978-3-319-31651-2, Springer International Publishing Switzerland
 
美国专利(已授权)
SPST Switch SPDT Switch SPMT Switch and Communication Device Using the Same Patent No.:US 9324512 B2
 
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