学术活动

学术报告:Quantum and mesoscopic transport in “engineered” nano-electronic devices

来源:  发布时间:2018-12-18 11:38:58 点击次数:

报告题目:Quantum and mesoscopic transport in “engineered” nano-electronic devices

报告时间:10:00-11:00,2018年12月21日

报告地点:物理学院新楼五楼多功能厅

报告人:张海婧博士(瑞士日内瓦大学)


报告摘要:

In this talk, I will present our recent experimental observations of the large-scale mesoscopic transport in nanostructured graphene, and tunnelling spectroscopy in gate-induced superconductivity in MoS2.

Anderson localization is one of the most important physical phenomena caused by the wave nature of quantum particles. It was originally proposed for the electronic system, but never clearly observed because the wave nature of electrons is usually only manifest at extremely small distances. In this talk, I will present the first observation of Anderson localization in two dimensions, on nanostructured graphene.  

Then the study of gate-induced superconductivity in MoS2 by performing tunnelling spectroscopy through the van der Waals heterostructures will be presented. The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics, but experiments on gate-induced superconductors have been largely confined to resistance measurements, which provide very limited information about the superconducting state. We explore gate-induced superconductivity in MoS2 by performing tunnelling spectroscopy to determine the energy-dependent density of states (DOS) for different levels of electron density n. Our measurements reveal the presence of a DOS that vanishes linearly with energy, whose explanation requires going beyond a conventional, purely phonon-driven BCS mechanism.  The bandstructure study of Transition metal dichalcogenides (TMDs) will also be discussed. By combining the in-plane transport, tunnelling spectroscopy and carrier density measurement, we are able to determine the valley occupation in TMDs, which is meaningful for understanding the microscopic mechanism of the gate-induced superconductivity.


报告人简介:

Dr. Haijing Zhang received her Bachelor degree from Nanjing University in 2009 and got her Ph.D in physics from Hong Kong University of Science and Technology (HKUST) in 2014 under the supervision of Prof. Ping Sheng. From September 2014 to September 2016, she worked in the physics department of HKUST as a Post-doctoral Fellow. Starting from October 2016, she joined Prof. Alberto F. Morpurgo’s group as a Post-doctoral Fellow in the Department of Quantum Matter Physics at University of Geveva, Switzerland. Her research interests mainly focus on quantum and mesoscopic transport properties on nanostructured 2D materials and 2D gate-induced superconductivity.  




邀请人:徐红星教授


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